RFG40N10 Fairchild Semiconductor, RFG40N10 Datasheet - Page 5

• Manufacturer Part Number: RFG40N10
• Description: MOSFET N-CH 100V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of RFG40N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 20V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
0V
V
GS
I
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
g(REF)
P
FIGURE 14. SWITCHING TIME TEST CIRCUIT
TO OBTAIN
FIGURE 16. GATE CHARGE TEST CIRCUIT
V
t
GS
P
V
AS
GS
R
R
G
GS
V
DS
DUT
R
L
V
I
R
AS
DS
L
DUT
DUT
0.01Ω
L
+
-
V
DD
+
-
+
-
V
V
DD
DD
I
V
g(REF)
0
0
DD
V
0
0
0
V
V
GS
GS
DS
10%
V
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
= 2V
GS
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. GATE CHARGE WAVEFORMS
t
d(ON)
90%
50%
t
Q
ON
g(TH)
10%
t
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
r
I
AS
Q
PULSE WIDTH
V
g(10)
DS
t
P
Q
g(TOT)
BV
t
AV
DSS
V
GS
= 10V
t
d(OFF)
90%
V
t
OFF
DS
50%
t
f
10%
V
GS
V
90%
DD
= 20V