FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 108
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
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Small Signal Transistors – General Purpose Transistors (Continued)
FJX945
SOT-323 PNP Configuration
FJX1182
FJX3906
DS901902
FJX2907A
SOT-623F NPN Configuration
FJZ945
SOT-623F PNP Configuration
FJZ733
SOT-89 NPN Configuration
KSC2982
FJC2098
KSD1621
KSC2883
FJC1963
FJC690
KSC2881
SOT-89 PNP Configuration
FJC790
FJC1386
KSB798
KSB1121
KSA1203
FJC1308
KSA1201
SuperSOT NPN Configuration
FSB649
FMMT449
FSB619
FSB560A
FSB560
SuperSOT PNP Configuration
FSB749
FMMT549
Products
V
CEO
120
120
-40
50
30
40
50
60
50
50
10
20
25
30
30
45
20
25
25
30
30
25
30
50
60
60
25
30
(V)
V
CBO
120
120
-50
60
35
40
60
60
60
60
30
50
30
30
50
45
30
30
30
30
30
35
50
50
80
80
35
35
(V)
V
EBO
-5
5
5
5
5
5
5
5
6
6
6
5
6
5
5
6
5
6
5
6
5
5
5
5
5
5
5
5
(V)
Max (A)
0.15
0.15
0.15
0.15
0.5
0.2
0.6
1.5
0.8
1.5
0.8
I
-2
2
5
2
3
2
5
1
2
3
3
1
2
2
2
3
1
C
Min
100
100
140
120
100
100
120
500
300
100
100
100
100
300
250
100
100
100
70
70
40
70
40
80
80
90
80
80
2-103
Discrete Power Products –
Max
700
240
300
700
300
700
700
600
390
560
320
560
240
800
390
400
560
320
390
240
300
300
550
300
300
300
–
–
h
FE
@V
Bold = New Products (introduced January 2003 or later)
10
CE
-2
6
1
1
6
6
6
1
2
2
2
2
2
5
2
1
2
2
2
5
2
2
2
2
2
2
2
(V) @I
1000
1000
C
100
150
500
500
100
500
500
100
100
500
100
100
500
500
100
500
200
500
500
500
-10
10
1
1
1
1
(mA)
Bipolar Transistors and JFETs
Max (V)
–0.25
0.25
0.45
0.08
0.45
0.32
0.35
0.75
0.3
0.4
0.3
1.6
0.3
0.3
0.5
0.4
0.4
0.6
0.6
0.3
0.6
1
2
1
1
2
1
1
V
@I
CE (sat)
1500
1000
1500
1500
2000
2000
2000
2000
2000
1500
1500
1500
3000
2000
3000
C
-500
100
100
500
100
100
100
500
500
50
20
4
4
(mA) @I
B
100
100
150
200
200
200
150
100
300
200
300
0.5
10
10
50
10
10
50
75
30
50
75
30
50
50
-5
5
2
(mA)
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