FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 24
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
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SO-8 (Continued)
FDS4435A
FDS4435
FDS6685
SI4835DY
NDS8435A
FDS6609A
FDS9435A
NDS9435A
NDS9430
FDS9400A
NDS9400A
FDS6875
FDS8934A
FDS9933
FDS9933A
NDS9933A
FDS4465
SI4463DY
FDS6575
FDS6576
FDS6375
FDS8433A
FDS9431A
Products
Min. (V)
BV
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
0.017
0.023
0.032
10V
0.02
0.02
0.02
0.05
0.05
0.06
0.13
–
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
2-19
0.0085
0.025
0.035
0.035
0.055
0.075
0.013
0.024
4.5V
0.035
0.035
0.055
0.012
0.014
0.047
0.05
0.08
0.08
0.03
0.14
0.13
0.1
0.2
Max (Ω) @ V
0.0105
0.0175
0.072
0.105
0.017
0.032
2.5V
GS
0.04
0.09
0.02
0.07
0.18
0.2
Replaced by FDS9400A
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
=
Discrete Power Products –
0.014
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
GS
2.4
21
17
19
19
48
18
10
10
10
23
20
10
86
41
50
43
23
20
8
6
6
= 5V
I
D
13.5
11.5
8.8
8.8
8.8
7.9
5.3
5.3
5.3
3.4
3.8
2.8
3.5
10
11
9
6
6
4
5
8
5
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2
2
2
2
2
(W)
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