FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 29
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
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TO-92L
IRFNL210B
FQNL2N50B
FQNL1N50B
TO-92L N-Channel
Products
Min. (V)
BV
200
500
500
DSS
Config.
Single
Single
Single
10V
1.5
5.3
9
R
DS(ON)
4.5V
–
–
–
Max (Ω) @ V
2-24
2.5V
–
–
–
GS
=
1.8V
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
7.2
6
4
= 5V
I
D
0.35
0.27
1
(A)
MOSFETs
P
D
3.1
1.5
1.5
(W)
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