FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 38
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
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www.fairchildsemi.com
TO-252 (DPAK) (Continued)
IRFR224B
FQD4N25
IRFR214B
FQD7N30
FQD5N30
FQD3N30
FQD2N30
FQD6N40C
IRFR330B
FQD6N40
FQD5N40
IRFR320B
FQD3N40
IRFR310B
FQD2N40
FQD6N50C
FQD5N50C
IRFR430B
FQD5N50
IRFR420B
FQD4N50
FQD2N50
FQD1N50
FQD5N60C
SSR4N60B
FQD3N60
FQD2N60
FQD2N60C
SSR2N60B
FQD1N60
FQD1N60C
SSR1N60B
FQD2N80
FQD1N80
FQD2N90
FQD2N100
FQD3P50
FQD1P50
FQD4P40
TO-252(DPAK) P-Channel
Products
Min. (V)
BV
1000
-500
-500
-400
250
250
250
300
300
300
300
400
400
400
400
400
400
400
400
500
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
800
800
900
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
1.75
1.15
1.75
11.5
11.5
10.5
1.1
0.7
0.9
2.2
3.7
1.6
3.4
3.4
5.8
1.3
1.4
1.5
1.8
2.6
2.7
5.3
2.5
2.5
3.6
4.7
4.7
6.3
7.2
4.9
3.1
12
20
10
2
1
1
9
5
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-33
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
13.5
12.5
4.3
8.1
9.8
5.5
3.7
7.7
8.5
4.8
5.9
5.5
13
16
25
13
10
14
19
18
25
13
14
10
15
22
10
12
12
12
18
11
18
6
4
6
4
9
5
= 5V
I
D
3.8
2.2
5.5
4.4
2.4
1.7
4.5
4.5
4.2
3.4
3.1
1.7
1.4
4.5
3.5
3.5
2.3
2.6
1.6
1.1
2.8
2.8
2.4
1.9
1.8
0.9
1.8
1.7
1.7
2.1
1.2
2.7
3
2
4
2
1
1
1
(A)
MOSFETs
P
D
2.5
37
25
50
45
30
25
48
48
50
45
41
30
26
25
61
48
48
50
41
45
30
25
49
49
50
45
44
44
30
28
28
50
45
50
50
50
38
50
(W)
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