FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 59
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
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www.fairchildsemi.com
TO-263 (D
FQB55N10
HUF76639S3S
HUFA76639S3S
HUF75637S3S
HUFA75637S3S
HUF76633S3S
HUFA76633S3S
FDB3682
FQB44N10
HUF75631S3S
HUFA75631S3S
IRFW550A
RF1S40N10SM
FQB33N10
IRFW540A
FQB33N10L
HUF75623S3S
HUFA75623S3S
FQB19N10
FQB19N10L
IRFW530A
FQB13N10
FQB13N10L
IRFW520A
FQB7N10
FQB7N10L
IRFW510A
FQB32N12V2
FDB2532
FDB2552
FQB45N15V2
FQB46N15
HUFA75842S3S
FDB42AN15A0
FDB2572
FDB2570
FQB16N15
FQB14N15
FQB9N15
Products
2
Min. (V)
PAK) (Continued)
BV
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
120
150
150
150
150
150
150
150
150
150
150
150
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.026
0.026
0.026
0.035
0.035
0.036
0.039
0.052
0.052
0.052
0.064
0.064
0.016
0.036
0.042
0.042
0.042
0.056
10V
0.03
0.03
0.04
0.04
0.04
0.04
0.11
0.18
0.18
0.35
0.35
0.05
0.04
0.08
0.16
0.21
0.1
0.1
0.2
0.4
0.4
0.055@5V
0.024@6V
0.054@6V
0.075@6V
0.06@6V
0.11@5V
0.38@5V
0.06@6V
0.09@6V
0.2@5V
R
0.027
0.027
0.036
0.036
4.5V
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-54
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
18.5
115
8.7
5.8
4.6
8.5
75
71
71
48
48
56
56
48
35
35
75
38
60
30
23
23
19
14
27
12
16
41
86
41
72
85
77
30
27
40
23
18
10
= 5V
I
D
43.5
12.8
12.8
45.6
16.4
14.4
9.2
7.3
7.3
5.6
55
51
51
44
44
39
39
32
33
33
40
40
33
28
33
22
22
19
19
14
32
79
37
45
43
35
29
22
9
(A)
MOSFETs
P
D
155
180
155
155
145
146
120
120
167
160
127
107
150
310
220
210
230
135
108
104
180
145
127
150
150
95
85
85
75
75
55
65
65
45
40
40
33
93
75
(W)
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