FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 85
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
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Bipolar Power Transistors – Darlington Transistors (Continued)
Products
TO-252(DPAK) NPN Configuration
KSH112
MJD112
KSH122
MJD122
TO-252(DPAK) PNP Configuration
KSH117
MJD117
KSH127
MJD127
TO-3P NPN Configuration
TIP140
TIP142
KSC5047
TO-3P PNP Configuration
TIP146
TIP147
TO-3PF NPN Configuration
TIP142F
TO-3PF PNP Configuration
TIP147F
I
C
10
10
15
10
10
10
10
2
2
8
8
2
2
8
8
(A)
V
CEO
100
100
100
100
100
100
100
100
100
100
100
100
60
50
80
(V) V
CBO
100
100
100
100
100
100
100
100
100
100
100
100
100
60
80
(V) V
EBO
15
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
P
C
125
125
100
125
125
20
20
20
20
20
20
20
20
60
60
(W)
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Min
40
2-80
Discrete Power Products –
12000
12000
12000
12000
12000
12000
12000
12000
Max
–
–
–
–
–
–
–
h
FE
@I
C
2
2
4
4
2
2
4
4
5
5
5
5
5
5
5
(A) @V
CE
3
3
4
4
3
3
4
4
4
4
5
4
4
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
V
CE
(sat)
C
2
2
4
4
2
2
4
4
5
5
5
5
5
5
5
(A) @I
0.008
0.008
0.016
0.016
0.008
0.008
0.016
0.016
0.01
0.01
0.12
0.01
0.01
0.01
0.01
B
(A)
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