IRFR224BTM_TC002 Fairchild Semiconductor, IRFR224BTM_TC002 Datasheet - Page 8

• Manufacturer Part Number: IRFR224BTM_TC002
• Description: MOSFET N-CH 250V 3.8A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRFR224BTM_TC002

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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BGA
1.5x1.5 mm
FDZ298N
2.0x2.0 mm
FDZ203N
2.0x2.5 mm
FDZ201N
FDZ209N
2.5x4.0 mm
FDZ2553N
FDZ2553NZ
FDZ2551N
3.5x4.0 mm
FDZ7064N
FDZ7064S
5.0x5.5 mm
FDZ5047N
1.5x1.5 mm
FDZ299P
2.0x2.0 mm
FDZ204P
2.0x2.5 mm
FDZ202P
2.5x4.0 mm
FDZ2554P
FFDZ2554PZ
FDZ2552P
3.5x4.0 mm
FDZ208P
FDZ206P
BGA N-Channel
BGA P-Channel
Products
Min. (V)
BV
-20
-20
-20
-20
-20
-20
-30
-20
20
20
20
60
20
20
20
30
30
30
DSS
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Config.
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Drain
Drain
Drain
Drain
Drain
Drain
0.0029
0.0105
0.007
0.007
10V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
0.08@5V
0.0045
0.0165
0.0095
0.027
0.018
0.018
0.014
0.014
0.018
0.008
0.009
0.055
0.045
0.045
0.028
0.028
0.045
4.5V
Max (Ω) @ V
2-3
0.0145
2.5V
0.039
0.075
0.075
0.045
0.045
0.075
0.03
0.03
0.02
0.02
0.03
0.08
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.6
11
11
12
13
11
31
25
52
14
15
25
38
7
9
9
9
= 5V
I
D
13.5
13.5
12.5
7.5
9.6
9.6
4.6
4.5
5.5
6.5
6.5
5.5
22
13
6
9
4
9
(A)
MOSFETs
P
D
1.7
1.6
2.1
2.1
2.1
2.2
2.2
2.8
1.7
1.8
2.1
2.1
2.1
2.2
2.2
2
2
2
(W)