PSMN004-36B,118 NXP Semiconductors, PSMN004-36B,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN004-36B,118
• Description: MOSFET N-CH 36V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-36B,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 36V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 20V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056874118; PSMN004-36B /T3; PSMN004-36B /T3

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 08621
Product data
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
th(j-a)
Z th j-mb
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
(K/W)
Thermal characteristics
10 -1
10 -2
10 -3
1
10 -6
0.2
0.1
0.05
0.02
= 0.5
7.1 Transient thermal impedance
single pulse
10 -5
10 -4
Rev. 01 — 19 November 2001
Conditions
Figure 4
vertical in still air; SOT78 package
mounted on a printed circuit board;
minimum footprint; SOT404 package
10 -3
N-channel enhancement mode field-effect transistor
10 -2
PSMN004-36P/36B
P
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10 -1
t p
T
t p (s)
=
t p
T
t
03ag43
1
Value Unit
0.65
60
50
4 of 13
K/W
K/W
K/W