PSMN004-36B,118 NXP Semiconductors, PSMN004-36B,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN004-36B,118
• Description: MOSFET N-CH 36V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-36B,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 36V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 20V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056874118; PSMN004-36B /T3; PSMN004-36B /T3

Philips Semiconductors
9397 750 08621
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
I
V
D
V GS(th)
GS
= 1 mA; V
(V)
junction temperature.
2.5
1.5
0.5
= 0 V; f = 1 MHz
2
1
0
-60
DS
= V
0
GS
max
typ
min
60
120
(pF)
C
10 5
10 4
10 3
T j (
10 -1
o
03aa33
C)
180
Rev. 01 — 19 November 2001
1
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
10
T
j
= 25 C; V
V DS (V)
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
gate-source voltage.
I D
C iss
C oss
C rss
0
03ag49
10 2
DS
PSMN004-36P/36B
0.5
= 5 V
1
min
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
1.5
typ
2
max
2.5
V GS (V)
03aa36
3
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