IRF7324D1 International Rectifier, IRF7324D1 Datasheet - Page 3
![MOSFET P-CH 20V 2.2A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7324D1
Manufacturer Part Number
IRF7324D1
Description
MOSFET P-CH 20V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7324D1.pdf
(8 pages)
Specifications of IRF7324D1
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
270 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
7.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
260pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7324D1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7324D1TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7324D1TRPBF
Manufacturer:
International Rectifier
Quantity:
25 612
www.irf.com
100.0
1000
0.01
10.0
100
0.1
1.0
0.1
10
1
0.1
1.0
TOP
BOTTOM
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
2.0
VGS
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
3.0
-1.5V
V DS = -10V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
4.0
1
Power Mosfet Characteristics
T J = 25°C
5.0
T J = 150°C
6.0
10
7.0
100.0
10.0
1.0
0.1
100
0.1
10
1
0.4
0.1
TOP
BOTTOM
T J = 150°C
-V SD , Source-to-Drain Voltage (V)
0.6
-V DS , Drain-to-Source Voltage (V)
VGS
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
-1.5V
0.8
T J = 25°C
1.0
≤ 60µs PULSE WIDTH
Tj = 150°C
1
IRF7324D1
1.2
V GS = 0V
1.4
3
1.6
10