IRF7324D1 International Rectifier, IRF7324D1 Datasheet - Page 6
![MOSFET P-CH 20V 2.2A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7324D1
Manufacturer Part Number
IRF7324D1
Description
MOSFET P-CH 20V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7324D1.pdf
(8 pages)
Specifications of IRF7324D1
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
270 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
7.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
260pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7324D1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7324D1TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7324D1TRPBF
Manufacturer:
International Rectifier
Quantity:
25 612
IRF7324D1
6
Fig. 12 -Typical Forward Voltage Drop Characteristics
0.1
10
1
0.0
Forward Voltage Drop - V
Forward Votage Drop - V
0.2
0.4
0.6
Schottky Diode Characteristics
T = 150°C
T = 125°C
T = 25°C
J
J
J
FM
FM
0.8
(V)
(V)
1.0
.
Fig.14 - Typical Junction capacitance
. 1
1
. 1
1
.1
1
1
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
T = 50°C
J
Vs.Reverse Voltage
Reverse Voltage - V (V)
4
25°C
00°C
75°C
50°C
25°C
8
12
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