IRF7601TR International Rectifier, IRF7601TR Datasheet - Page 5
![MOSFET N-CH 20V 5.7A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7601TR
Manufacturer Part Number
IRF7601TR
Description
MOSFET N-CH 20V 5.7A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7601TR.pdf
(8 pages)
Specifications of IRF7601TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 3.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
650pF @ 15V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7601TR
IRF7601
IRF7601CT
IRF7601
IRF7601CT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7601TR
Manufacturer:
MARVELL
Quantity:
100
Part Number:
IRF7601TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7601TRPBF
Manufacturer:
International Rectifier
Quantity:
1 959
Part Number:
IRF7601TRPBF
Manufacturer:
IR
Quantity:
20 000
100
0.1
10
0.00001
1
4.5V
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
D = 0.50
0.20
0.10
0.05
0.02
0.01
V
12V
G
V
GS
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Same Type as D.U.T.
Q
Current Regulator
GS
.2 F
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
50K
3mA
Current Sampling Resistors
.3 F
Q
Charge
Q
GD
G
I
G
0.001
D.U.T.
I
D
t , Rectangular Pulse Duration (sec)
1
+
-
V
DS
0.01
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
4.5V
V
GS
t
d(on)
V
1
J
DS
t
µs
r
DM
x Z
1
thJA
D.U.T.
P
2
DM
+ T
R
10
D
A
t
t
1
IRF7601
d(off)
t
2
t
f
+
-
V
DD
100