STB12NM50FDT4 STMicroelectronics, STB12NM50FDT4 Datasheet - Page 9

• Manufacturer Part Number: STB12NM50FDT4
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB12NM50FDT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5380-2; STB12NM50FDT4

STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
3
Figure 17. Switching times test circuit for
Figure 19. Test circuit for inductive load
Figure 21. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 18. Gate charge test circuit
Figure 20. Unclamped inductive load test
Figure 22. Switching time waveform
circuit
Test circuit
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