BSP170PE6327 Infineon Technologies, BSP170PE6327 Datasheet - Page 3

• Manufacturer Part Number: BSP170PE6327
• Description: MOSFET P-CH 60V 1.9A SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP170PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 410pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP170PE6327INTR; SP000012133

Rev 2.52
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
g
rr
V
f =1 MHz
V
10 V, I
R
V
V
T
V
T
V
di
page 3
A
j
GS
DD
DD
GS
GS
R
G
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=6 Ω
=0 V, V
=-30 V, V
=-48 V, I
=0 to -10 V
=0 V, I
D
=-1.9 A,
F
F
DS
=-1.9 A,
=|I
D
=-25 V,
GS
=-1.9 A,
S
|,
=-
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-4.34
-0.83
typ.
328
105
-1.4
-4.9
-10
38
14
28
92
60
36
41
-
-
max.
-1.98
-1.9
-7.4
-7.6
-1.1
410
135
138
-14
48
21
42
90
54
62
BSP 170 P
-
Unit
pF
ns
nC
V
A
V
ns
nC
2009-02-16