SPB80N04S2-H4 Infineon Technologies, SPB80N04S2-H4 Datasheet
SPB80N04S2-H4
Specifications of SPB80N04S2-H4
SPB80N04S2H4T
Related parts for SPB80N04S2-H4
SPB80N04S2-H4 Summary of contents
Page 1
... Repetitive avalanche energy, limited by T Reverse diode dv/dt I =80A, V =32V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C C Operating and storage temperature IEC climatic category; DIN IEC 68-1 SPP80N04S2-H4,SPB80N04S2-H4 P- TO262 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6014 Q67060-S6013 Q67060-S6021 Symbol puls E AS ...
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... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) = 0.5K/W the chip is able to carry I thJC Page 2 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Values min. typ. max. - 0.35 0 Values min. typ. max 2 ...
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... Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPP80N04S2-H4,SPB80N04S2-H4 Symbol Conditions ≥2 DS(on)max I ...
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... Safe operating area parameter : °C C SPP80N04S2- Drain current parameter: V SPP80N04S2- °C 190 Max. transient thermal impedance thJC parameter : K 29.0µ 100 µ Page 4 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 ) ≥ 100 120 140 160 ) SPP80N04S2- 0.50 single pulse - 2003-05-08 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
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... Typ. drain-source on resistance R DS(on) parameter Ω [ 4 5.0 d 5.5 e 6.0 f 6 Typ. forward transconductance g = f(I DS(on)max fs parameter: g 140 S 100 Page 5 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2- SPP80N04S2- [ 5.5 6.0 6.5 7.0 10 100 120 140 ); T =25° 100 120 2003-05- 180 160 I D ...
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... Typ. gate threshold voltage V GS(th parameter: V 3.5 V 2.5 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss oss 10 rss Page 6 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2- 1.25 mA 250 µ -60 - 100 ) µs p SPP80N04S2- °C typ 175 °C typ °C (98 175 °C (98%) ...
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... Drain-source breakdown voltage (BR)DSS j parameter SPP80N04S2- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 ) Gate = 80 A pulsed D SPP80N04S2-H4 0 max 0 100 120 2003-05-08 DS max 140 170 nC Q Gate ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N04S2-H4 and BSPB80N04S2-H4, for simplicity the device is referred to by the term SPP80N04S2-H4 and SPB80N04S2-H4 throughout this documentation. SPP80N04S2-H4,SPB80N04S2-H4 ...