SPD08P06P G Infineon Technologies, SPD08P06P G Datasheet - Page 2

• Manufacturer Part Number: SPD08P06P G
• Description: MOSFET P-CH 60V 8.83A TO-252
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD08P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.83A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096087; SPD08P06P G; SPD08P06PGINTR; SPD08P06PGXT

Rev 1.6
1)
PCB is vertical without blown air.
Parameter
Thermal characteristics
Thermal resistance,
junction - case
Thermal resistance,
junction - ambient,leaded
SMD version, device on PCB:
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
=25 °C
=150 °C
=-6.2 A
DS
=V
=-60 V, V
=-60 V, V
=0 V, I
=-20 V, V
=-6.2 V, I
|>2|I
2
2
cooling area
( one layer, 70µ, thick) copper area for drain connection.
GS
, I
D
|R
D
D
=-250 µA
=-250 µA
DS(on)max
D
GS
GS
DS
=-10 A
=0 V,
=0 V,
=0 V
1)
,
min.
-2.1
-60
2.5
-
-
-
-
-
-
-
-
Values
typ.
-3.0
-0.1
230
-10
-10
4.9
-
-
-
-
-
SPU-D08P06P G
max.
-100
-100
110
250
300
70
-4
-1
-
-
Unit
K/W
K/W
V
µA
nA
mΩ
S
2008-02-18