NTD20N06L-1G ON Semiconductor, NTD20N06L-1G Datasheet - Page 6

• Manufacturer Part Number: NTD20N06L-1G
• Description: MOSFET N-CH 60V 20A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD20N06L-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 48 mOhm @ 10A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 990pF @ 25V
• Power - Max: 1.36W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
C
GS
Figure 11. Maximum Rated Forward Biased
0.00001
V
= 25°C
= 15 V
DS
0.02
0.05
D = 0.5
0.1
0.2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
0.01
Safe Operating Area
1
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
0.0001
100 ms
LIMIT
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
I
10 ms
S
0.001
Figure 13. Thermal Response
SAFE OPERATING AREA
10 ms
t
p
dc
http://onsemi.com
NTD20N06L
100
di/dt
t, TIME (s)
t
a
P
6
(pk)
t
rr
0.01
DUTY CYCLE, D = t
t
b
I
S
140
120
100
80
60
40
20
t
0.25 I
1
0
25
t
Figure 12. Maximum Avalanche Energy versus
2
S
T
J
, STARTING JUNCTION TEMPERATURE (°C)
50
Starting Junction Temperature
0.1
1
TIME
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
75
J(pk)
qJC
(t) = r(t) R
− T
C
100
= P
qJC
(pk)
1
1
R
125
qJC
(t)
I
D
= 16 A
150
10
175