NTD60N02R-35G ON Semiconductor, NTD60N02R-35G Datasheet - Page 7

• Manufacturer Part Number: NTD60N02R-35G
• Description: MOSFET N-CH 25V 8.5A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD60N02R-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1330pF @ 20V
• Power - Max: 1.25W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SEATING PLANE
V
W
F
G
B
R
K
A
D
3 PL
PACKAGE DIMENSIONS
0.13 (0.005) W
3 IPAK, STRAIGHT LEAD
http://onsemi.com
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CASE 369AC−01
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NTD60N02R
ISSUE O
C
7
E
NOTES:
1.. DIMENSIONING AND TOLERANCING
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
4. DIMENSION A DOES NOT INCLUDE
PER ANSI Y14.5M, 1982.
DAMBAR POSITION.
DAMBAR POSITION OR MOLD GATE.
DIM
W
A
B
C
D
G
H
K
R
E
F
J
V
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.134
0.180
0.035
0.000
MIN
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.043
0.040
0.023
0.142
0.215
0.050
0.010
MAX
MILLIMETERS
0.000
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
3.40
4.57
0.89
MIN
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.09
1.01
0.58
3.60
5.46
1.27
0.25