NTMD4184PFR2G ON Semiconductor, NTMD4184PFR2G Datasheet - Page 2
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NTMD4184PFR2G
Manufacturer Part Number
NTMD4184PFR2G
Description
MOSFET P-CH 30V 2.3A 8-SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NTMD4184PFR2G.pdf
(7 pages)
Specifications of NTMD4184PFR2G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
95 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
4.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
360pF @ 10V
Power - Max
770mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.095 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
2.31 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTMD4184PFR2G
Manufacturer:
ON Semiconductor
Quantity:
1 600
Part Number:
NTMD4184PFR2G
Manufacturer:
ON/安森美
Quantity:
20 000
1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN-TO-SOURCE CHARACTERISTICS
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤10 s Steady State (Note 1)
Junction-to-FOOT (Drain) Equivalent to R
Junction-to-Ambient – Steady State (Note 2)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Characteristic
Parameter MOSFET & Schottky
(T
qJC
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
Q
R
Q
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
G(TOT)
d(ON)
Q
DS(on)
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
t
t
FS
ISS
t
t
SD
GS
GD
RR
a
b
r
f
/T
/T
http://onsemi.com
J
J
NTMD4184PF
V
V
V
V
V
V
I
GS
V
V
V
D
DS
GS
GS
GS
V
GS
V
GS
GS
GS
V
V
I
V
= -1.3 A
2
DS
D
GS
DS
GS
= -4.5 V
= -24 V
= -10 V
GS
= 0 V, d
= 0 V,
= -4.5 V, V
= -1.0 A, R
= -10 V, V
= -10 V, V
= 0 V
= -1.5 V, I
Test Condition
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
= 0 V, I
V
I
I
I
D
D
DS
S
DS
= -3.0 A
= -3.0 A
= -1.3 A
IS
= -10 V
, I
/d
D
GS
D
DS
DS
t
DS
D
G
= 250 mA
= 250 mA
= 100 A/ms,
= ±20 V
= -3.0 A
T
= 6.0 W
T
I
I
= -10 V,
= -10 V,
T
T
D
D
= -10 V,
J
J
J
J
= -3.0 A
= -1.5 A
= 125°C
= 125°C
= 25°C
= 25°C
Symbol
R
R
R
R
qJA
qJA
qJA
qJF
-1.0
Min
-30
-0.8
12.8
Typ
120
280
4.4
5.0
2.8
0.4
1.1
1.1
5.8
7.2
2.6
0.7
2.8
7.4
30
70
80
52
12
18
10
Max
163
79
54
50
±100
Max
-1.0
-3.0
-1.0
-10
165
360
110
4.2
8.8
6.0
95
80
15
24
36
°C/W
Unit
mV/°C
mV/°C
Unit
mW
nA
nC
nC
nC
mA
pF
ns
ns
V
V
S
V