NTMD4184PFR2G ON Semiconductor, NTMD4184PFR2G Datasheet - Page 2

• Manufacturer Part Number: NTMD4184PFR2G
• Description: MOSFET P-CH 30V 2.3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4184PFR2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 360pF @ 10V
• Power - Max: 770mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2.31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN-TO-SOURCE CHARACTERISTICS
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤10 s Steady State (Note 1)
Junction-to-FOOT (Drain) Equivalent to R
Junction-to-Ambient – Steady State (Note 2)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Characteristic
Parameter MOSFET & Schottky
(T
qJC
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
Q
R
Q
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
G(TOT)
d(ON)
Q
DS(on)
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
t
t
FS
ISS
t
t
SD
GS
GD
RR
a
b
r
f
/T
/T
http://onsemi.com
J
J
NTMD4184PF
V
V
V
V
V
V
I
GS
V
V
V
D
DS
GS
GS
GS
V
GS
V
GS
GS
GS
V
V
I
V
= -1.3 A
2
DS
D
GS
DS
GS
= -4.5 V
= -24 V
= -10 V
GS
= 0 V, d
= 0 V,
= -4.5 V, V
= -1.0 A, R
= -10 V, V
= -10 V, V
= 0 V
= -1.5 V, I
Test Condition
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
= 0 V, I
V
I
I
I
D
D
DS
S
DS
= -3.0 A
= -3.0 A
= -1.3 A
IS
= -10 V
, I
/d
D
GS
D
DS
DS
t
DS
D
G
= 250 mA
= 250 mA
= 100 A/ms,
= ±20 V
= -3.0 A
T
= 6.0 W
T
I
I
= -10 V,
= -10 V,
T
T
D
D
= -10 V,
J
J
J
J
= -3.0 A
= -1.5 A
= 125°C
= 125°C
= 25°C
= 25°C
Symbol
R
R
R
R
qJA
qJA
qJA
qJF
-1.0
Min
-30
-0.8
12.8
Typ
120
280
4.4
5.0
2.8
0.4
1.1
1.1
5.8
7.2
2.6
0.7
2.8
7.4
30
70
80
52
12
18
10
Max
163
79
54
50
±100
Max
-1.0
-3.0
-1.0
-10
165
360
110
4.2
8.8
6.0
95
80
15
24
36
°C/W
Unit
mV/°C
mV/°C
Unit
mW
nA
nC
nC
nC
mA
pF
ns
ns
V
V
S
V