NTMD4184PFR2G ON Semiconductor, NTMD4184PFR2G Datasheet - Page 5
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NTMD4184PFR2G
Manufacturer Part Number
NTMD4184PFR2G
Description
MOSFET P-CH 30V 2.3A 8-SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NTMD4184PFR2G.pdf
(7 pages)
Specifications of NTMD4184PFR2G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
95 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
4.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
360pF @ 10V
Power - Max
770mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.095 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
2.31 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTMD4184PFR2G
Manufacturer:
ON Semiconductor
Quantity:
1 600
Part Number:
NTMD4184PFR2G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
1000
0.01
0.01
100
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.0000001
0.0000001
0.1
0.2
0.1
0.05
0.02
0.02
0.01
0.5
0.01
0.05
0.5
0.2
T
0.1
Single Pulse
Single Pulse
J
V
= 85°C
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.3
Figure 13. Typical Forward Voltage
0.000001
0.000001
T
0.5
J
= -55°C
T
Figure 12. Thermal Response - R
J
0.00001
= 125°C
0.00001
Figure 11. Thermal Response - R
T
0.7
J
= 25°C
0.9
0.0001
0.0001
1.1
TYPICAL CHARACTERISTICS
1.3
0.001
0.001
http://onsemi.com
PULSE TIME (sec)
PULSE TIME (sec)
NTMD4184PF
1.5
qJA
5
0.01
0.01
qJA
at Steady State (1 inch sq pad)
100
0.1
at Steady State (min pad)
10
V
1
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
T
J
0.1
0.1
= 85°C
Figure 14. Maximum Forward Voltage
0.3
T
J
0.5
= 125°C
1
1
0.7
T
J
10
10
= 25°C
0.9
1.1
100
100
1.3
1000
1000
1.5