BAP1321-02,115 NXP Semiconductors, BAP1321-02,115 Datasheet - Page 3
BAP1321-02,115
Manufacturer Part Number
BAP1321-02,115
Description
DIODE PIN 60V 100MA SOD-523
Manufacturer
NXP Semiconductors
Type
Attenuator/Switchr
Datasheet
1.BAP1321-02115.pdf
(7 pages)
Specifications of BAP1321-02,115
Package / Case
SC-79, SOD-523
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
60V
Current - Max
100mA
Capacitance @ Vr, F
0.32pF @ 20V, 1MHz
Resistance @ If, F
1.3 Ohm @ 100mA, 100MHz
Power Dissipation (max)
715mW
Configuration
Single
Reverse Voltage
60 V
Forward Continuous Current
100 mA
Frequency Range
SHF
Termination Style
SMD/SMT
Carrier Life
0.5 us
Forward Voltage Drop
0.95 V
Maximum Diode Capacitance
0.45 pF
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
1.3 Ohms
Maximum Series Resistance @ Minimum If
5 Ohms
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
715 mW
Forward Current
100mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Package Type
I-IGIA
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
2
Applications Frequency Range
SHF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1913-2
934056560115
BAP1321-02 T/R
934056560115
BAP1321-02 T/R
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
V
I
C
r
L
R
SYMBOL
j
s
s
s
s
s
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
21
21
21
21
21
Silicon PIN diode
d
th j-s
2
2
2
2
2
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
I
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
f = 100 MHz; note 1
V
V
when switched from I
R
I
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
R
R
R
R
R
R
L
= 50 mA
I
I
I
I
= 0.5 mA; f = 900 MHz
= 0.5 mA; f = 1800 MHz
= 0.5 mA; f = 2450 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA; f = 1800 MHz
= 100 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
PARAMETER
F
F
F
F
= 100 ; measured at I
= 60 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
Rev. 02 - 3 January 2008
CONDITIONS
F
= 10 mA to I
R
= 3 mA
R
= 6 mA;
0.95
0.4
0.35
0.25
3.4
2.4
1.2
0.85
16.3
11.4
9.2
0.23
0.27
0.33
0.18
0.22
0.27
0.10
0.16
0.20
0.08
0.13
0.18
0.5
0.6
TYP.
VALUE
BAP1321-02
Product specification
85
1.1
100
0.45
0.32
5.0
3.6
1.8
1.3
MAX.
3 of 7
UNIT
K/W
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
nH
UNIT
s