BAR 50-02V E6327 Infineon Technologies, BAR 50-02V E6327 Datasheet - Page 2
![DIODE RF SGL 50V 100MA SC-79](/photos/5/36/53695/bas_3005b-02v_e6327_sml.jpg)
BAR 50-02V E6327
Manufacturer Part Number
BAR 50-02V E6327
Description
DIODE RF SGL 50V 100MA SC-79
Manufacturer
Infineon Technologies
Datasheet
1.BAR_50-03W_E6327.pdf
(12 pages)
Specifications of BAR 50-02V E6327
Package / Case
SC-79
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.4pF @ 5V, 1MHz
Resistance @ If, F
4.5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
HF, VHF, UHF, SHF
Carrier Life
1.1 us
Forward Voltage Drop
1.1 V at 50 mA
Maximum Diode Capacitance
0.5 pF
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
4.5 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
40 Ohms at 0.5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR5002VE6327XT
SP000012921
SP000012921
Maximum Ratings at T
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR50-02L, T
BAR50-02V, T
BAR50-03W, T
Junction temperature
Operating temperature range
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BAR50-02L
BAR50-02V
BAR50-03W
Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
Forward voltage
I
1
F
Pb-containing package may be available upon special request
For calculation of R
R
= 50 mA
= 50 V
S
S
S
≤ 130°C
≤ 120°C
thJA
≤ 115°C
please refer to Application Note Thermal Resistance
A
1)
= 25°C, unless otherwise specified
A
= 25°C, unless otherwise specified
2
Symbol
I
V
R
Symbol
V
I
P
T
T
T
Symbol
R
F
F
j
op
stg
R
tot
thJS
min.
-
-
-55 ... 125
-55 ... 150
≤ 140
Value
Value
≤ 120
Values
≤ 80
250
250
250
100
150
50
0.95
typ.
-
max.
1.1
2009-05-13
50
BAR50...
Unit
V
mA
mW
°C
Unit
K/W
Unit
nA
V