BAR 50-02L E6327 Infineon Technologies, BAR 50-02L E6327 Datasheet - Page 11
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BAR 50-02L E6327
Manufacturer Part Number
BAR 50-02L E6327
Description
DIODE RF SGL 50V 100MA TSLP-2
Manufacturer
Infineon Technologies
Datasheet
1.BAR_50-03W_E6327.pdf
(12 pages)
Specifications of BAR 50-02L E6327
Package / Case
TSLP-2-1
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.4pF @ 5V, 1MHz
Resistance @ If, F
4.5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
HF, VHF, UHF, SHF
Carrier Life
1.1 us
Forward Voltage Drop
1.1 V at 50 mA
Maximum Diode Capacitance
0.5 pF
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
4.5 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
40 Ohms at 0.5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR5002LE6327XT
SP000013603
SP000013603
Package Outline
Foot Print
For board assembly information please refer to Infineon website "Packages"
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
1
2
Cathode
marking
Top view
1) Dimension applies to plated terminal
Cathode
marking
Copper
0.6
Package TSLP-2-1
Solder mask
0.05 MAX.
0.76
4
0.4
+0.1
11
Stencil apertures
0.5
0.45
±0.035
0.5
BAS16-02L
Type code
Cathode marking
Laser marking
1)
Bottom view
2
1
0.6
±0.05
2009-05-13
BAR50...