BAR 50-02L E6327 Infineon Technologies, BAR 50-02L E6327 Datasheet - Page 7

• Manufacturer Part Number: BAR 50-02L E6327
• Description: DIODE RF SGL 50V 100MA TSLP-2
• Manufacturer: Infineon Technologies

Specifications of BAR 50-02L E6327

• Package / Case: TSLP-2-1
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
• Resistance @ If, F: 4.5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Frequency Range: HF, VHF, UHF, SHF
• Carrier Life: 1.1 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.5 pF
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 4.5 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 0.5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR5002LE6327XT; SP000013603

Permissible Pulse Load
I
BAR50-03W
Isolation I
V
BAR50-02L in series configuration, Z = 50 Ω
Fmax
R
= Parameter
10
10
dB
-10
-15
-20
-25
-30
/ I
0
1
0
10
0
FDC
-6
SO
= ƒ (t
10
1
= -|S
-5
p
)
10
2
21
0 V
1 V
10 V
-4
|
2
= ƒ (f)
10
3
0
0.005
0.1
0.2
0.5
1
2
5
-3
10
4
-2
GHz
s
t p
f
10
6
0
7
Insertion loss I
I
BAR50-02L in series configuration, Z = 50 Ω
F
= Parameter
dB
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
0
0
1
L
= -|S
2
21
10 mA
3
|
2
3 mA
5 mA
= ƒ (f)
100 mA
4
2009-05-13
BAR50...
GHz
f
6