1N5767#T25 Avago Technologies US Inc., 1N5767#T25 Datasheet - Page 3
![DIODE PIN RF SWITCH 100V AXIAL](/photos/16/5/160562/pin_schottky_diodes_wht_sml.jpg)
1N5767#T25
Manufacturer Part Number
1N5767#T25
Description
DIODE PIN RF SWITCH 100V AXIAL
Manufacturer
Avago Technologies US Inc.
Datasheet
1.5082-3081.pdf
(4 pages)
Specifications of 1N5767#T25
Package / Case
Axial
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
100V
Current - Max
100mA
Capacitance @ Vr, F
0.4pF @ 50V, 1MHz
Resistance @ If, F
2.5 Ohm @ 100mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
VHF, UHF
Termination Style
Axial
Carrier Life
1.3 us
Forward Voltage Drop
1 V
Maximum Diode Capacitance
0.4 pF at 50 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
2.5 Ohms at 100 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Typical Parameters at T
3
Figure 1. Forward Current vs. Forward
Voltage.
Figure 4. Typical Capacitance vs.
Reverse Voltage.
Figure 7. Typical Second Order
Intermodulation Distortion.
0.01
100
100
1.0
0.1
20
40
60
80
10
.5
0
0
1
0
0
0
10 dB Bridged Tee Attenuator
40 dB mV Output Levels
One Input Frequency Fixed 100 MHz
10
V
0.2
10
125°C
–60°C
F
25°C
REVERSE VOLTAGE (V)
– FORWARD VOLTAGE (V)
20
5082-3001, 3039,
3077, 3080
IN5719
FREQUENCY (MHz)
20
0.4
30
30
0.6
40
5082-3039
IN5719
5082-3001
40
50
A
0.8
= 25°C (unless otherwise noted)
50
5082-3081
5082-3080
5082-3379
60
1.0
60
70
1.2
70
80
10,000
Figure 8. Typical Cross Intermodulation
Distortion.
Figure 5. Typical Capacitance vs.
Reverse Voltage.
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
1000
2.5
2.0
1.5
1.0
100
0.1
10
20
30
40
50
60
70
80
.5
10
0
0.001
1
0
0
I
F
MODULATED FREQUENCY (MHz)
– FORWARD BIAS CURRENT (mA)
10
10
PIN Diode Cross Modulation
10 dB Bridged Tee Attenuator
Unmodulated Frequency 100 MHz
0.01
REVERSE VOLTAGE (V)
20
20
100% Modulation 15 kHz
40 dB mV Output Levels
30
0.1
30
5082-3188
40
5082-3001
5082-3039
5082-3077
IN5719
40
1
50
50
5082-3081
5082-3080
5082-3379
5082-3080
5082-3081
5082-3379
60
10
60
70
100
70
80
100,000
10,000
Figure 6. Typical Reverse Recovery Time
vs. Forward Current for Various Reverse
Driving Voltages.
Figure 3. Typical RF Resistance vs.
Forward Bias Current.
1000
1000
100
100
10
10
0.001
1
0
I
F
5082-3001
– FORWARD BIAS CURRENT (mA)
V
V
V
R
R
FORWARD CURRENT (mA)
R
IN5719
0.01
= 10 V
= 20 V
= 5 V
3039
3077
10
0.1
5082-3080
5082-3379
5082-3081
1
20
10
100
30