BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 10
![MOSFET NCH DUAL GATE 12V SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BF998,215
Manufacturer Part Number
BF998,215
Description
MOSFET NCH DUAL GATE 12V SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BF998215.pdf
(15 pages)
Specifications of BF998,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
12V
Current Rating
30mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1973-2
934002640215
BF998 T/R
934002640215
BF998 T/R
NXP Semiconductors
1996 Aug 01
handbook, halfpage
Silicon N-channel dual-gate MOS-FETs
V
DD
ΔG tr
(dB)
Fig.19 Automatic gain control characteristics
= 12 V; f = 200 MHz; T
−10
−20
−30
−40
−50
0
0
I DSS =
max
typ
min
measured in circuit of Fig.17.
2
amb
4
= 25 C.
6
V agc (V)
8
MGE808
10
10
handbook, halfpage
V
DD
ΔG tr
(dB)
Fig.20 Automatic gain control characteristics
= 12 V; f = 800 MHz; T
−10
−20
−30
−40
−50
0
0
I DSS =
max
typ
min
measured in circuit of Fig.18.
2
amb
4
= 25 C.
BF998; BF998R
6
Product specification
V agc (V)
8
MGE807
10