BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 8
![MOSFET NCH DUAL GATE 12V SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BF998,215
Manufacturer Part Number
BF998,215
Description
MOSFET NCH DUAL GATE 12V SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BF998215.pdf
(15 pages)
Specifications of BF998,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
12V
Current Rating
30mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1973-2
934002640215
BF998 T/R
934002640215
BF998 T/R
NXP Semiconductors
1996 Aug 01
handbook, full pagewidth
Silicon N-channel dual-gate MOS-FETs
V
L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.
L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.
Tapped at approximately half a turn from the cold side, to adjust G
DD
= 12 V; G
S
= 2 mS; G
50 Ω
input
V DD
L
= 0.5 mS.
5.5 pF
140 kΩ
C1
L1
1 nF
100 kΩ
Fig.17 Gain control test circuit at f = 200 MHz.
1 nF
1 nF
V agc
47 kΩ
15 pF
D1
BB405
L
= 0.5 mS. C1 adjusted for G
input
V tun
330 kΩ
8
1 nF
1.8 kΩ
360 Ω
1 nF
S
1 nF
1 nF
= 2 mS.
L2
V DD
20 μH
10 pF
47 μF
D2
BB405
1 nF
output
V tun
BF998; BF998R
330 kΩ
1 nF
50 Ω
output
MGE802
Product specification