BF1211WR,115 NXP Semiconductors, BF1211WR,115 Datasheet - Page 13
![MOSFET N-CH DUAL GATE 6V SOT343R](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BF1211WR,115
Manufacturer Part Number
BF1211WR,115
Description
MOSFET N-CH DUAL GATE 6V SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BF1211215.pdf
(16 pages)
Specifications of BF1211WR,115
Package / Case
CMPAK-4
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
29dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
0.9dB
Current - Test
15mA
Voltage - Test
5V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
6V
Power Gain (typ)@vds
34@5VdB
Noise Figure (max)
2dB
Package Type
CMPAK
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.1@5V@Gate 1/1.1@5V@Gate 2pF
Output Capacitance (typ)@vds
0.9@5VpF
Reverse Capacitance (typ)
0.015@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
180mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1961-2
934057513115
BF1211WR
934057513115
BF1211WR
NXP Semiconductors
2003 Dec 16
N-channel dual-gate MOS-FETs
Plastic surface-mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343R
1.1
0.8
A
w
M
max
0.1
A 1
B
3
2
0.4
0.3
b p
y
b p
IEC
0.7
0.5
b 1
e 1
D
e
0.25
0.10
c
b 1
JEDEC
2.2
1.8
D
4
1
REFERENCES
0
1.35
1.15
E
B
1.3
e
scale
EIAJ
13
1
1.15
e 1
A
2.2
2.0
H E
A 1
BF1211; BF1211R; BF1211WR
2 mm
0.45
0.15
L p
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
0.1
Product specification
y
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343R