BLF6G22-180RN,112 NXP Semiconductors, BLF6G22-180RN,112 Datasheet
BLF6G22-180RN,112
Specifications of BLF6G22-180RN,112
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BLF6G22-180RN,112 Summary of contents
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... BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; ...
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... MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pin BLF6G22-180RN (SOT502A BLF6G22LS-180RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G22-180RN BLF6G22LS-180RN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G22-180RN_22LS-180RN_1 Product data sheet Pinning ...
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... Symbol P L(AV IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G22-180RN and BLF6G22LS-180RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G22-180RN_22LS-180RN_1 Product data sheet Thermal characteristics Parameter Conditions thermal resistance from case ...
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... 1400 mA 2140 MHz 001aai642 60 20 IMD (dBc) D (%) 120 180 P (W) L(PEP) Fig 3. Rev. 01 — 20 November 2008 BLF6G22(LS)-180RN Power LDMOS transistor 001aai641 60 D (%) 120 180 P (W) L 001aai643 IMD3 IMD5 IMD7 L(PEP 1400 mA 2140 MHz Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values © ...
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... L(AV) V carrier spacing 10 MHz. Fig 5. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as function of average load power; typical values Rev. 01 — 20 November 2008 BLF6G22(LS)-180RN Power LDMOS transistor 001aai645 IMD3 ACPR (W) L(AV 1400 mA 2140 MHz ( 5 MHz C20 C13 ...
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... Value 13 pF 1.4 pF 220 nF 100 1.1 pF 0 220 2.7 6.8 Rev. 01 — 20 November 2008 BLF6G22(LS)-180RN Power LDMOS transistor C15 C16 C13 C14 C11 C9 C10 C17 C18 C19 C12 = 3.5 and thickness = 0.76 mm. r Remarks [1] ATC 100B or capacitor of same quality ...
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... REFERENCES JEDEC JEITA Rev. 01 — 20 November 2008 BLF6G22(LS)-180RN Power LDMOS transistor 1.70 34.16 9.91 27.94 0.25 0.51 1 ...
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... REFERENCES JEDEC JEITA Rev. 01 — 20 November 2008 BLF6G22(LS)-180RN Power LDMOS transistor 20.70 9.91 0.25 20.45 9.65 0.815 0.390 0.010 0.805 0.380 EUROPEAN ISSUE DATE ...
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... Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access Release date Data sheet status 20081120 Product data sheet Rev. 01 — 20 November 2008 BLF6G22(LS)-180RN Power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 20 November 2008 BLF6G22(LS)-180RN Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 November 2008 Document identifier: BLF6G22-180RN_22LS-180RN_1 All rights reserved. ...