MRF6S27015NR1 Freescale Semiconductor, MRF6S27015NR1 Datasheet

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MRF6S27015NR1

Manufacturer Part Number
MRF6S27015NR1
Description
IC MOSFET RF N-CHAN TO270-2
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S27015NR1

Transistor Type
N-Channel
Frequency
2.6GHz
Gain
14dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
160mA
Voltage - Test
28V
Power - Output
3W
Package / Case
TO-270-2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6S27015NR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch
Table 2. Thermal Characteristics
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 2000 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
160 mA, P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Case Temperature 80°C, 7.5 W Avg., Two - Tone
Case Temperature 79°C, 3 W CW
Power Gain — 14 dB
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — - 45 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 3 Watts Avg., f = 2600 MHz, Channel Bandwidth =
Characteristic
(1,2)
Rating
DD
Operation
DD
= 28 Volts, I
Reel.
DQ
=
Symbol
Symbol
V
R
V
T
T
T
DSS
θJC
GS
stg
C
J
Document Number: MRF6S27015N
MRF6S27015NR1 MRF6S27015GNR1
2300 - 2700 MHz, 3 W AVG., 28 V
MRF6S27015GNR1
MRF6S27015NR1
CASE 1265A - 03, STYLE 1
LATERAL N - CHANNEL
CASE 1265 - 09, STYLE 1
RF POWER MOSFETs
SINGLE W - CDMA
MRF6S27015GNR1
- 65 to +150
MRF6S27015NR1
TO - 270 - 2 GULL
Value
- 0.5, +68
- 0.5, +12
Value
150
225
TO - 270 - 2
2.0
2.2
PLASTIC
PLASTIC
(2,3)
Rev. 2, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRF6S27015NR1 Summary of contents

Page 1

... RF POWER MOSFETs CASE 1265 - 09, STYLE 270 - 2 PLASTIC MRF6S27015NR1 CASE 1265A - 03, STYLE 270 - 2 GULL PLASTIC MRF6S27015GNR1 Symbol Value V - 0.5, +68 DSS V - 0.5, + +150 stg T 150 C T 225 J (2,3) Symbol Value R θJC 2.0 2.2 MRF6S27015NR1 MRF6S27015GNR1 Unit Vdc Vdc °C °C °C Unit °C/W 1 ...

Page 2

... Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally input matched. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. MRF6S27015NR1 MRF6S27015GNR1 2 Rating 3 = 25°C unless otherwise noted) C ...

Page 3

... Microstrip Z8 0.085″ x 0.485″ Microstrip Z9 0.091″ x 0.667″ Microstrip Z10 0.138″ x 0.816″ Microstrip Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and Values Part C1 100 nF Chip Capacitor C2 4.7 pF Chip Capacitor C3 9.1 pF Chip Capacitor C4, C5 ...

Page 4

... C11 R1 C3 MRF6S27015N Rev. 3 Figure 2. MRF6S27015NR1(GNR1) Test Circuit Component Layout MRF6S27015NR1 MRF6S27015GNR1 C10 RF Device Data Freescale Semiconductor ...

Page 5

... Figure 6. Third Order Intermodulation Distortion −5 −30 −10 −40 −15 −50 −20 −60 −25 2680 2700 −5 −30 −10 −40 −15 −50 −20 −60 −25 2680 2700 = 28 Vdc 240 mA 190 mA 160 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S27015NR1 MRF6S27015GNR1 5 ...

Page 6

... Figure 10. Single - Carrier W - CDMA ACPR, ALT1, Power MRF6S27015NR1 MRF6S27015GNR1 6 TYPICAL CHARACTERISTICS − Vdc 160 mA −30 DQ −35 Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz −40 −45 −50 −55 − Figure 8. Intermodulation Distortion Products P6dB = 44.3 dBm (27 W) P3dB = 43.7 dBm (23 W) ...

Page 7

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 14. MTTF versus Junction Temperature I = 160 2600 MHz OUTPUT POWER (WATTS) CW out 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 22%. DD out D MRF6S27015NR1 MRF6S27015GNR1 30 230 250 7 ...

Page 8

... Bandwidth @ ±5 MHz Offset. PAR = 8 0.01 0.01% Probability on CCDF 0.001 0.0001 PEAK−TO−AVERAGE (dB) Figure 15. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal MRF6S27015NR1 MRF6S27015GNR1 CDMA TEST SIGNAL −10 −20 −30 −40 −50 −60 −70 −80 −90 ...

Page 9

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load = 5 Ω 2500 MHz Output Matching Network MRF6S27015NR1 MRF6S27015GNR1 9 ...

Page 10

... MRF6S27015NR1 MRF6S27015GNR1 160 mA 25°C, 50 ohm system ∠ φ 1.453 39.2 0.001 1.180 36.5 0.000 ...

Page 11

... MRF6S27015NR1 MRF6S27015GNR1 11 ...

Page 12

... MRF6S27015NR1 MRF6S27015GNR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MRF6S27015NR1 MRF6S27015GNR1 13 ...

Page 14

... MRF6S27015NR1 MRF6S27015GNR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6S27015NR1 MRF6S27015GNR1 15 ...

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... MRF6S27015NR1 MRF6S27015GNR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MRF6S27015NR1 MRF6S27015GNR1 17 ...

Page 18

... Min - Max to 0.46 - 0.61 Min - Max. Added JEDEC Standard Package Number. • Added footnote, Measurement made with device in straight lead configuration before any lead forming operation is applied, to Functional Tests table • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers MRF6S27015NR1 MRF6S27015GNR1 18 PRODUCT DOCUMENTATION REVISION HISTORY Description to On Characteristics table, p ...

Page 19

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006-2008. All rights reserved. MRF6S27015NR1 MRF6S27015GNR1 19 ...

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