MRF19030LR3 Freescale Semiconductor, MRF19030LR3 Datasheet - Page 2
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MRF19030LR3
Manufacturer Part Number
MRF19030LR3
Description
IC MOSFET RF N-CHAN NI-400
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF19030LR5.pdf
(8 pages)
Specifications of MRF19030LR3
Transistor Type
N-Channel
Frequency
1.96GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
1µA
Current - Test
300mA
Voltage - Test
26V
Power - Output
30W
Package / Case
NI-400
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
4.5W
Power Gain (typ)@vds
13dB
Frequency (min)
1.8GHz
Frequency (max)
2GHz
Package Type
NI-400
Pin Count
3
Forward Transconductance (typ)
2S
Input Capacitance (typ)@vds
98.5@26VpF
Output Capacitance (typ)@vds
37@26VpF
Reverse Capacitance (typ)
1.3@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
36%
Mounting
Surface Mount
Mode Of Operation
CDMA/FM/TDMA
Number Of Elements
1
Power Dissipation (max)
83300mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF19030LR3
Manufacturer:
ISC
Quantity:
4 523
MRF19030LR3 MRF19030LSR3
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Input Capacitance (Including Input Matching Capacitor in Package)
Output Capacitance
Reverse Transfer Capacitance
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
(V
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
(V
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
(V
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
(V
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
(V
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
(V
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
(V
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
GS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
DD
DD
DD
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 26 Vdc, V
= 26 Vdc, V
= 26 Vdc, V
= 0 Vdc, I
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
D
DS
D
D
D
D
= 20 μA)
GS
GS
GS
GS
out
out
out
out
out
out
out
out
= 100 μAdc)
= 300 mA)
= 1 Adc)
(1)
= 1 Adc)
= 0 Vdc)
= 0 Vdc)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
Characteristic
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
(T
= 300 mA,
= 300 mA,
= 300 mA,
= 300 mA,
= 300 mA, f1 = 1930.0 MHz,
= 300 mA, f1 = 1930.0 MHz,
= 300 mA, f1 = 1930.0 MHz,
= 300 mA, f1 = 1930.0 MHz,
C
= 25°C unless otherwise noted)
(1)
V
Symbol
V
V
V
(BR)DSS
I
I
C
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
IRL
IRL
DSS
GSS
g
oss
η
η
iss
rss
fs
ps
ps
Min
65
—
—
—
—
—
—
—
—
—
—
—
12
33
—
—
2
2
0.29
98.5
Typ
- 31
- 13
- 31
- 13
3.3
1.3
37
13
36
13
36
—
—
—
3
2
Freescale Semiconductor
Max
- 28
4.5
0.4
—
—
—
—
—
—
—
—
—
—
—
- 9
1
1
4
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
dB
pF
pF
pF
%
%
S