BFG35,115 NXP Semiconductors, BFG35,115 Datasheet - Page 7

• Manufacturer Part Number: BFG35,115
• Description: TRANS NPN 10V 150MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG35,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 18V
• Transistor Type: NPN
• Frequency - Transition: 4GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 10V
• Dc Current Gain Hfe Max: 25 @ 100mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 18 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.15 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933919910115::BFG35 T/R::BFG35 T/R

NXP Semiconductors
1999 Aug 24
handbook, halfpage
handbook, halfpage
NPN 4 GHz wideband transistor
(dB)
G UM
I
Fig.8
V
Fig.10 Intermodulation distortion as a function of
d
C
(dB)
CE
im
= 100 mA; V
= 10 V; V
40
30
20
10
45
50
55
60
65
70
0
20
10
Maximum unilateral power gain as a
function of frequency.
collector current.
o
CE
= 750 mV; f
40
= 10 V; T
10
2
(p+qr)
amb
60
= 25 C.
= 793.25 MHz; T
80
10
3
f (MHz)
100
amb
I
C
MBB386
MBB383
= 25 C.
(mA)
120
10
4
7
handbook, halfpage
handbook, halfpage
(dB)
(dB)
V
Fig.9
V
Fig.11 Second order intermodulation distortion as
d
d
CE
CE
im
2
= 10 V; V
= 10 V; V
45
50
55
60
65
70
45
50
55
60
65
70
20
20
Intermodulation distortion as a function of
collector current.
a function of collector current.
o
o
= 800 mV; f
= 50 dBmV; f
40
40
(p+qr)
60
60
(p+q)
= 443.25 MHz; T
= 450 MHz; T
80
80
Product specification
amb
100
100
amb
= 25 C.
I
I
C
C
MBB385
MBB382
= 25 C.
BFG35
(mA)
(mA)
120
120