ZXTDBM832TA Diodes Zetex, ZXTDBM832TA Datasheet - Page 4

• Manufacturer Part Number: ZXTDBM832TA
• Description: TRANS NPN DUAL LOSAT 20V 8-MLP
• Manufacturer: Diodes Zetex

Specifications of ZXTDBM832TA

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 4.5A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 270mV @ 125mA, 4.5A
• Current - Collector Cutoff (max): 25nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2A, 2V
• Power - Max: 1.7W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXTDBM832TATR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ZXTDBM832
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
= 25°C unless otherwise stated).
MIN.
2%
200
300
200
100
100
7.5
40
20
4
TYP.
0.98
0.88
100
115
190
210
400
450
360
180
140
170
400
8.2
27
90
23
8
MAX.
1.05
0.95
150
135
250
270
25
25
25
15
30
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CES
CB
CC
=100 A
=100 A
=10mA*
=0.1A, I
=1A, I
=2A, I
=3A, I
=4.5A, I
=4.5A, I
=4.5A, V
=10mA, V
=0.2A, V
=2A, V
=6A, V
=50mA, V
=I
=6V
=32V
=10V, f=1MHz
=10V, I
ISSUE 1 - JUNE 2002
B2
=16V
=10mA
B
B
B
CE
CE
=10mA*
=50mA*
=100mA*
B
B
B
CE
CE
=10mA*
=125mA*
=125mA*
=2V*
=2V*
C
CE
CE
=3A
=2V*
=2V*
=2V*
=10V