M29W160EB7AN6E NUMONYX, M29W160EB7AN6E Datasheet - Page 25

• Manufacturer Part Number: M29W160EB7AN6E
• Description: Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 70ns 48-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W160EB7AN6E

• Package: 48TSOP
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 14. Write AC Waveforms, Chip Enable Controlled
Table 14. Write AC Characteristics, Chip Enable Controlled
Note: 1. Sampled only, not 100% tested.
Symbol
t
t
EHRL
t
t
t
VCHWL
t
t
t
t
t
t
t
t
EHWH
WLEL
DVEH
EHDX
GHEL
EHGL
ELEH
EHEL
2. 70 ns becomes 80 ns if the 80 ns device code is used.
AVAV
AVEL
ELAX
A0-A19/
A–1
W
G
E
DQ0-DQ7/
DQ8-DQ15
V CC
RB
(1)
t
t
t
BUSY
t
t
t
t
t
CPH
OEH
Alt
t
t
t
t
VCS
WC
WH
WS
CP
DS
DH
AH
AS
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Address Valid to Chip Enable Low
Chip Enable Low to Address Transition
Output Enable High Chip Enable Low
Chip Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
tVCHWL
CC
High to Write Enable Low
tWLEL
tGHEL
tAVEL
Parameter
tAVAV
VALID
tELEH
tDVEH
tEHRL
VALID
tELAX
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tEHWH
M29W160ET, M29W160EB
tEHGL
70/7A/80
tEHEL
tEHDX
M29W160E
70
45
45
30
45
30
50
0
0
0
0
0
0
(2)
AI02924
90
90
50
50
30
50
35
50
0
0
0
0
0
0
Unit
25/42
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs