BC817-16-7-F Diodes Inc, BC817-16-7-F Datasheet - Page 2
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BC817-16-7-F
Manufacturer Part Number
BC817-16-7-F
Description
TRANSISTOR NPN 45V SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.BC817-16-7-F.pdf
(4 pages)
Specifications of BC817-16-7-F
Transistor Type
NPN
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
310mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BC817-16-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2
Fig. 1 Power Dissipation vs. Substrate Temperature (Note 1)
200
400
300
100
100
0
20
0.5
80
0.3
60
40
0.4
0.2
0.1
0
0
0
0
0.1
Fig. 5 Typical Collector-Emitter Saturation Voltage
I / I = 10
R
C
θSB
T , SUBSTRATE TEMPERATURE ( C)
V , COLLECTOR-EMITTER VOLTAGE (V)
SB
CE
B
typical
limits
at T = 25 C
= 320°C/W
I , COLLECTOR CURRENT (mA)
A
C
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
1
°
vs. Collector Current
150 C
°
100
10
10
25 C
°
100
°
-50 C
°
200
1,000
20
www.diodes.com
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1,000
1,000
100
100
300
500
100
200
400
10
10
0
0.1
Fig. 4 Typical DC Current Gain vs. Collector Current
1
Fig. 6 Gain-Bandwidth Product vs. Collector Current
0
V
CE
V , COLLECTOR-EMITTER VOLTAGE (V)
= 1V
CE
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
150 C
10
°
T = 25 C
A
°
10
1
-50 C
BC817-16 / -25 / -40
°
100
100
© Diodes Incorporated
1,000
1,000
April 2009
2