2SD2656T106 Rohm Semiconductor, 2SD2656T106 Datasheet
2SD2656T106
Manufacturer Part Number
2SD2656T106
Description
TRANS NPN 30V 1A SOT-323
Manufacturer
Rohm Semiconductor
Datasheet
1.2SD2656T106.pdf
(3 pages)
Specifications of 2SD2656T106
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
350mV @ 25mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 100mA, 2V
Power - Max
200mW
Frequency - Transition
400MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SD2656T106
2SD2656T106TR
2SD2656T106TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD2656T106
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose amplification (30V, 1A)
2SD2656
! ! ! ! Application
Low frequency amplifier
! ! ! ! Features
1) A collector current is large.
2) Collector saturation voltage is low.
! ! ! ! External dimensions (Units : mm)
! ! ! ! Absolute maximum ratings (Ta=25°C)
! ! ! ! Electrical characteristics (Ta=25°C)
Collector-emitter saturation voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Single pulse, P
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Transition frequency
Corrector output capacitance
∗1 Pulsed
V
At I
CE(sat)
C
= 500mA / I
Parameter
≤ 350mV
W
=1ms
Parameter
B
= 25mA
Symbol
V
V
V
Tstg
I
P
CBO
CEO
EBO
I
Tj
CP
C
C
−55~+150
Limits
200
150
Symbol Min. Typ. Max. Unit
30
30
BV
BV
V
BV
6
1
2
Cob
I
I
CE(sat)
CBO
h
EBO
f
CBO
CEO
EBO
FE
T
270
30
30
Unit
mW
6
−
−
−
−
−
°C
°C
V
V
V
A
A
∗
140
400
−
−
−
−
−
−
5
100
100
350
680
−
−
−
−
−
MHz V
mV
nA
nA
pF
V
V
V
−
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
! ! ! ! Packaging specifications
Type
2SD2656
I
I
I
V
I
V
V
V
C
C
E
C
CB
CE
CE
CB
=10µA
=1mA
=10µA
/I
EB
B
=30V
/I
=2V, I
=10V, I
=6V
=500mA/25mA
C
=2V/100mA
E
Package
Code
Basic ordering unit (pieces)
=−100mA, f=100MHz
E
0.1Min.
Conditions
=0A, f=1MHz
Abbreviated symbol : EU
1.25
2.1
Each lead has same dimensions
∗
∗
1
1
(1) Emitter
(2) Base
(3) Collector
2SD2656
Taping
T106
3000
1/2
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2SD2656T106 Summary of contents
Page 1
Transistors General purpose amplification (30V, 1A) 2SD2656 ! ! ! ! Application Low frequency amplifier ! ! ! ! Features 1) A collector current is large. 2) Collector saturation voltage is low. ≤ 350mV V CE(sat 500mA ...
Page 2
Transistors ! ! ! ! Electrical characteristic curves 1000 Ta=100°C Ta=25°C Ta=−40°C 100 = Pulsed 10 0.001 0.01 0.1 COLLECTOR CURRENT : I (A) C Fig.1 DC current gain vs. collector current 1 = Pulsed Ta=25°C ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...