2SC4793(F,M) Toshiba, 2SC4793(F,M) Datasheet
2SC4793(F,M)
Specifications of 2SC4793(F,M)
2SC4793(Q)
2SC4793F,M
2SC4793FM
2SC4793Q
2SC4793Q
Related parts for 2SC4793(F,M)
2SC4793(F,M) Summary of contents
Page 1
... TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency 100 MHz (typ.) T • Complementary to 2SA1837 Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta = 25°C Collector power dissipation Tc = 25° ...
Page 2
I – 1 0.8 6 0 0.2 Common emitter Tc = 25° Collector-emitter voltage V ( – ...
Page 3
... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...