BGA 777L7 E6327 Infineon Technologies, BGA 777L7 E6327 Datasheet - Page 13

• Manufacturer Part Number: BGA 777L7 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Low Power Single Bandr

Specifications of BGA 777L7 E6327

• Operating Frequency: 2650 MHz
• P1db: 4 dBm
• Noise Figure: 1.2 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 10 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSLP-7-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA777L7E6327XT

Noise Figure
2.13
V
Power Gain
Data Sheet
CC
= 2.8 V,
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
1
18
17
16
15
14
13
−40
Measured Performance Band 7 Application High Gain Mode vs. Temperature
V
|S
NF
GS
21
−20
| = f (
= 2.8 V,
= f (
T
Frequency [GHz]
f
0
A
)
)
V
EN
20
T
A
= 2.8 V,
Measured Performance Band 7 Application High Gain Mode vs. Temperature
[°C]
40
60
f
= 2650 MHz
80
100
BGA777L7 - Low Power Single-Band UMTS LNA
Input Compression
13
Supply Current
−10
−11
−12
−13
−14
−6
−7
−8
−9
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
5.5
4.5
3.5
−40
6
5
4
3
−20
I
CC
P1dB
= f (
Frequency [GHz]
0
= f (
T
A
20
)
T
Electrical Characteristics
A
f
)
[°C]
40
60
V3.0, 2009-07-02
80
100