BSS63 Fairchild Semiconductor, BSS63 Datasheet - Page 3
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BSS63
Manufacturer Part Number
BSS63
Description
TRANSISTOR PNP 100V SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSS63.pdf
(4 pages)
Specifications of BSS63
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
250mV @ 2.5mA, 25mA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 10mA, 1V
Power - Max
350mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
350 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
30
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS63
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
BSS63LT1G
Manufacturer:
ON Semiconductor
Quantity:
16 850
Company:
Part Number:
BSS63LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BSS63LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
BSS63R
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BSS63Ј¬215
Manufacturer:
NXP
Quantity:
9 000
100
Typical Characteristics
0.1
0.8
0.6
0.4
0.2
10
1
1
0.1
25
80
60
40
20
0
Voltage vs Collector Current
0.1
V
Input and Output Capacitance
Base-Emitter Saturation
vs Ambient Temperature
Collector-Cutoff Current
CB
I
- 40 °C
C
T - AM BIENT TE MPE RATURE ( C)
= 10 0V
50
A
- COLLECTOR CURRENT ( mA)
V
vs Reverse Voltage
R
- REVERSE BIAS VOLTAGE(V)
25 °C
1
1
75
125 °C
100
10
C
10
eb
125
= 10
°
f = 1.0 MHz
C
100
cb
150
100
0.8
0.6
0.4
0.2
1
0.1
350
300
250
200
150
100
50
220
210
200
190
180
170
0
Base-Emitter ON Voltage vs
0
PNP General Purpose Amplifier
0.1
- 40 °C
Collector-Emitter Breakdown
I
C
Voltage with Resistance
Collector Current
- COLLECTOR CURRENT (mA)
Between Emitter-Base
25
25 °C
Ambient Temperature
Power Dissipation vs
1
1
TEMPERATURE ( C)
50
RESISTANCE (k )
125 °C
10
75
SOT-23
10
100
o
V
C E
100
= 5V
125
(continued)
100
1000
150
3