BC850B,215 NXP Semiconductors, BC850B,215 Datasheet - Page 4
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BC850B,215
Manufacturer Part Number
BC850B,215
Description
TRANSISTOR NPN 45V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BC849C215.pdf
(8 pages)
Specifications of BC850B,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
NPN
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933589690215::BC850B T/R::BC850B T/R
NXP Semiconductors
CHARACTERISTICS
T
Notes
1. V
2. V
2004 Jan 16
I
I
h
V
V
V
C
C
f
F
j
CBO
EBO
T
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
NPN general purpose transistors
c
e
BEsat
BE
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BC849B; BC850B
BC849C; BC850C
BC849B; BC850B
BC849C; BC850C
PARAMETER
I
I
I
I
see Figs 2 and 3
I
see Figs 2 and 3
I
I
I
I
I
I
I
I
I
I
f = 10 Hz to 15.7 kHz
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
C
E
C
C
C
C
= 0; V
= 0; V
= i
= 0; V
= 10 μA; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= 10 mA; V
= 200 μA; V
= 200 μA; V
e
c
= 0; V
= 0; V
CB
CB
EB
4
CONDITIONS
= 30 V
= 30 V; T
= 5 V
CE
CE
CB
EB
B
B
CE
CE
CE
B
B
CE
CE
= 0.5 mA
= 0.5 mA; note 1
= 10 V; f = 1 MHz
= 500 mV; f = 1 MHz −
= 5 V;
= 5 V; note 2
= 5 mA
= 5 mA; note 1
= 5 V;
= 5 V; note 2
= 5 V; f = 100 MHz
= 5 V; R
= 5 V; R
j
= 150 °C
S
S
= 2 kΩ;
= 2 kΩ;
−
−
−
−
−
200
420
−
−
−
−
580
−
−
100
−
−
MIN.
BC849; BC850
−
−
−
240
450
290
520
90
200
700
900
660
−
2.5
11
−
−
−
TYP.
Product data sheet
15
5
100
−
−
450
800
250
600
−
−
700
770
−
−
−
4
4
MAX.
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB
UNIT