PMBTA44,215 NXP Semiconductors, PMBTA44,215 Datasheet - Page 3

TRANS NPN 400V 300MA SOT-23

PMBTA44,215

Manufacturer Part Number
PMBTA44,215
Description
TRANS NPN 400V 300MA SOT-23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PMBTA44,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
750mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 10V
Power - Max
250mW
Frequency - Transition
20MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40
Gain Bandwidth Product Ft
20 MHz
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
300 mA
Maximum Dc Collector Current
300 mA
Power Dissipation
250 mW
Maximum Operating Frequency
20 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061413215

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBTA44,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
5. Limiting values
PMBTA44_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
BM
Fig 1. Power derating curve SOT23 (TO-236AB)
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
FR4 PCB, standard footprint
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
(mW)
Rev. 01 — 22 February 2008
P
tot
300
200
100
0
75
400 V, 0.3 A NPN high-voltage low V
25
25
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
amb
1 ms
1 ms
75
25 C
125
T
006aab196
amb
( C)
175
[1]
CEsat
Min
-
-
-
-
-
-
-
-
55
65
PMBTA44
© NXP B.V. 2008. All rights reserved.
(BISS) transistor
Max
500
400
6
300
300
100
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
C
C
C
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