MJE243G ON Semiconductor, MJE243G Datasheet - Page 2
MJE243G
Manufacturer Part Number
MJE243G
Description
TRANS PWR NPN 4A 100V TO225AA
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of MJE243G
Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
600mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 200mA, 1V
Power - Max
1.5W
Frequency - Transition
40MHz
Mounting Type
Through Hole
Package / Case
TO-225-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
4 A
Power Dissipation
15 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
40
Maximum Operating Frequency
40 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
4 A
Current, Gain
15
Frequency
40 MHz
Package Type
TO-225
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
8.34 °C/W
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
0.6 V
Voltage, Emitter To Base
7 V
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage
100V
Emitter-base Voltage
7V
Collector Current (dc) (max)
4A
Dc Current Gain (min)
40
Frequency (max)
40MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJE243GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE243G
Manufacturer:
ON Semiconductor
Quantity:
450
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current (V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current-Gain - Bandwidth Product
Output Capacitance
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
C
C
C
C
C
C
C
C
CB
CE
CB
= 10 mAdc, I
= 200 mAdc, V
= 1.0 Adc, V
= 500 mAdc, I
= 1.0 Adc, I
= 2.0 Adc, I
= 500 mAdc, V
= 100 mAdc, V
= 100 Vdc, I
= 100 Vdc, I
= 10 Vdc, I
B
B
CE
B
E
= 100 mAdc)
= 200 mAdc)
B
E
E
= 0)
CE
CE
CE
= 0, f = 0.1 MHz)
= 1.0 Vdc)
= 50 mAdc)
= 0)
= 0, T
= 1.0 Vdc)
= 1.0 Vdc)
= 10 Vdc, f
BE
C
= 7.0 Vdc, I
= 125_C)
Characteristic
test
= 10 MHz)
C
MJE243 - NPN,
(T
= 0)
C
= 25_C unless otherwise noted)
2
MJE253 - PNP
V
Symbol
V
V
V
CEO(sus)
I
I
CE(sat)
BE(sat)
BE(on)
h
C
CBO
EBO
f
FE
T
ob
Min
100
40
15
40
-
-
-
-
-
-
-
-
Max
180
0.1
0.1
0.1
0.3
0.6
1.8
1.5
50
-
-
-
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
-