2N5307 Fairchild Semiconductor, 2N5307 Datasheet - Page 2

• Manufacturer Part Number: 2N5307
• Description: TRANSISTOR DARL NPN 40V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5307

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.4V @ 200µA, 200mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 2mA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse
Thermal Characteristics
Off Characteristics
BV
BV
BV
I
I
On Characteristics *
h
V
V
V
Small Signal Characteristics
C
h
P
R
R
CBO
EBO
FE
fe
Symbol
CE
BE
BE
D
ob
Symbol
JC
JA
(BR)CEO
(BR)CBO
(BR)EBO
(sat)
(on)
(sat)
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Reverse Base Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Small-Signal Current Gain
300 s, Duty Cycle
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
2.0%
Parameter
T
A
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
I
I
I
V
V
V
V
V
I
I
I
V
I
f = 1.0kHz
I
f = 10MHz
C
C
E
C
C
C
C
C
CB
CB
EB
CE
CE
CB
= 10mA, I
= 0.1 A, I
= 200mA, I
= 200mA, I
= 0.1 A, I
= 200mA,V
= 2.0mA, V
= 2.0mA, V
= 40V, I
= 40V, I
= 12V, I
= 5.0V, I
= 5.0V, I
= 10V, f = 1.0MHz
Test Condition
E
B
E
C
E
C
C
C
B
B
= 0, TA = 100 C
= 0
= 0
CE
CE
CE
= 0
= 0
= 0
= 2.0mA
= 100mA
= 0.2mA
= 0.2mA
= 5.0V
= 5.0V,
= 5.0V,
Max.
83.3
625
200
5.0
2,000
6,000
2,000
Min.
6.0
40
40
12
Typ.
20,000
Max.
0.1
0.1
1.4
1.6
1.5
mW/ C
20
10
Units
mW
C/W
C/W
Rev. B, July 2002
Units
pF
V
V
V
V
V
V
A
A
A