BC847B STMicroelectronics, BC847B Datasheet - Page 2

• Manufacturer Part Number: BC847B
• Description: TRANSISTOR NPN 45V 100MA SOT-23
• Manufacturer: STMicroelectronics

Specifications of BC847B

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 497-2524-2

BC847B / BC847C
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
R
V
Device mounted on a PCB area of 1 cm
Pulsed: Pulse duration = 300 s, duty cycle
V
V
V
Symbol
V
V
(BR)CEO
thj-amb
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
BE(on)
h
I
I
CBO
NF
EBO
FE
CBO
f
T
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Base
Breakdown Voltage
(I
Collector-Emitter
Breakdown Voltage
(I
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
Transition Frequency
Collector-Base
Capacitance
Noise Figure
C
E
B
C
= 0)
= 0)
= 0)
= 0)
Parameter
E
= 0)
2
.
V
V
V
I
I
I
I
I
I
I
I
I
I
for BC847B
for BC847C
I
for BC847B
for BC847C
I
I
V
C
C
E
C
C
C
C
C
C
C
C
C
E
f = 200 Hz R
CB
CB
EB
CE
= 10 A
= 2 mA
= 10 A
= 10 mA
= 100 mA
= 10 mA
= 100 mA
= 2 mA
= 10 mA
= 10 A
= 2 mA
= 10 mA V
= 0
= 5 V
= 30 V
= 30 V
= 5 V
case
2 %
= 25
Test Conditions
V
I
CB
C
CE
= 0.2 mA f = 1KHz
o
= 10 V
C unless otherwise specified)
G
= 5 V f = 100MHz
= 2 K
V
V
V
T
V
I
I
I
I
CE
CE
B
B
B
B
C
CE
CE
= 0.5 mA
= 5 mA
= 0.5 mA
= 5 mA
= 150
f = 1 MHz
= 5 V
= 5 V
= 5 V
= 5 V
o
Max
C
Min.
0.58
200
420
100
50
45
6
Typ.
0.09
0.66
500
150
270
290
520
0.2
0.7
0.9
2.5
2
Max.
0.25
0.77
100
450
800
0.6
0.7
15
10
5
o
Unit
MHz
C/W
nA
nA
pF
dB
V
V
V
V
V
V
V
V
V
A