BB804,215 NXP Semiconductors, BB804,215 Datasheet - Page 2

DIODE VHF VAR CAP DUAL SOT23

BB804,215

Manufacturer Part Number
BB804,215
Description
DIODE VHF VAR CAP DUAL SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BB804,215

Capacitance @ Vr, F
46.5pF @ 2V, 1MHz
Capacitance Ratio
1.75
Capacitance Ratio Condition
C2/C8
Voltage - Peak Reverse (max)
18V
Diode Type
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Q @ Vr, F
-
Other names
933879420215
BB804 T/R
BB804 T/R
Philips Semiconductors
4. Marking
5. Limiting values
6. Characteristics
9397 750 13386
Product data sheet
Table 3:
[1]
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5:
T
[1]
Type number
BB804
Symbol
Per diode
V
I
T
T
Symbol
Per diode
I
r
C
C
----------------
C
F
R
s
j
stg
j
R
d
= 25 C unless otherwise specified
d 2V
d 8V
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
V
R
is the value at which C
Parameter
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
Parameter
reverse current
diode series
resistance
diode
capacitance
capacitance ratio f = 1 MHz
Marking
Limiting values
Characteristics
Rev. 03 — 1 July 2004
d
= 38 pF.
Conditions
see
f = 100 MHz
V
see
Figure 3
R
V
V
= 2 V; f = 1 MHz;
R
R
Figure 2
Figure 1
= 16 V
= 16 V; T
and
j
Conditions
= 60 C
Marking code
16*
VHF variable capacitance double diode
[1]
Min
-
-
-
42
1.65
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Min
-
-
55
55
Typ
-
-
0.2
-
-
Max
18
50
+150
+125
Max
20
200
-
46.5
1.75
BB804
Unit
V
mA
C
C
Unit
nA
nA
pF
2 of 7

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