PF38F1030W0ZBQ0 Micron Technology Inc, PF38F1030W0ZBQ0 Datasheet - Page 39
PF38F1030W0ZBQ0
Manufacturer Part Number
PF38F1030W0ZBQ0
Description
Manufacturer
Micron Technology Inc
Datasheet
1.PF38F1030W0ZBQ0.pdf
(52 pages)
Specifications of PF38F1030W0ZBQ0
Operating Supply Voltage (max)
1.95V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
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15.0
15.1
15.2
Table 1.
Figure 1.
Datasheet
Note:
1.
Symbol
t
t
SDR
RDR
t
RC
is defined in
Data Retention Set-up Time
Data Retention Recovery Time
SRAM Operations
Power-up Sequence and Initialization
The SRAM functionality and reliability are independent of the power-up sequence and power-up
slew rate of the core S-V
conditions. SRAM reliability is also independent of the power-down sequence and power-down
slew rate of the core S-V
Data Retention Mode
SRAM Data Retention Operation
SRAM Data Retention Operation Waveform—S-CS1# Controlled
Table 7.2, “SRAM AC Characteristics” on page
S-V
S-V
S-V
S-CS1#
Parameter
V
V
DR
SS
CC
IHmin
CCmin
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 009
CC
CC
. Any power-up sequence and power-up slew rate is possible under use
.
Min
t
t
RC
0
SDR
Intel® Wireless Flash Memory (W18/W30 SCSP)
Data Retention Mode
24.
Max
–
–
Unit
ns
ns
t
RDR
Notes
1
June 2005
39
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