RD28F1602C3TD70S B48 Intel, RD28F1602C3TD70S B48 Datasheet - Page 32
RD28F1602C3TD70S B48
Manufacturer Part Number
RD28F1602C3TD70S B48
Description
Manufacturer
Intel
Datasheet
1.RD28F1602C3TD70S_B48.pdf
(75 pages)
Specifications of RD28F1602C3TD70S B48
Operating Supply Voltage (max)
3.3V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
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C3 SCSP Flash Memory
5.5
Table 14.
26 Aug 2005
32
Notes:
1.
2.
3.
4.
R1
R2
R3
R4
R5
R6
R7
R8
R9
R1
#
0
t
t
V
t
V
t
V
t
V
t
X
t
X
t
Z
t
Z
t
Sym
AVAV
AVQ
ELQ
GLQ
PHQ
ELQ
GLQ
EHQ
GHQ
OH
F-OE# may be delayed up to t
Sampled, but not 100% tested.
See
See Figure 4, “Input/Output Reference Waveform” on page 28 for timing measurements and maximum allowable input
slew rate.
Figure 6 “AC Waveform: Flash Read Operations” on page
Read Cycle Time
Address to Output Delay
F-CE# to Output Delay
F-OE# to Output Delay
F-RP# to Output Delay
F-CE# to Output in Low Z
F-OE# to Output in Low Z
F-CE# to Output in High Z
F-OE# to Output in High Z
Output Hold from Address
F-CE#, or F-OE# Change,
Whichever Occurs First
Flash AC Characteristics.
Flash AC Characteristics—Read Operations
Parameter
Intel
®
Advanced+ Boot Block Flash Memory (C3) SCSP Family
ELQV
Order Number: 252636, Revision: 004
–t
GLQV
after the falling edge of CE# without impact on t
Product
Density
Voltage
Range
Note
1
1
2
2
2
2
2
Mi
70
n
0
0
0
-70
150
Ma
70
70
20
20
20
x
33.
Mi
90
16-Mbit
n
0
0
0
-90
150
Ma
90
90
30
25
20
x
2.7 V - 3.3 V
110
Mi
n
0
0
0
-110
110
110
150
Ma
30
25
20
x
ELQV
Min
70
0
0
0
-70
150
Ma
70
70
20
20
20
32-Mbit
x
Min
90
0
0
0
-90
Datasheet
150
Ma
90
90
20
20
20
x
Uni
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
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