MT47H64M8CF-3:F Micron Technology Inc, MT47H64M8CF-3:F Datasheet - Page 119
MT47H64M8CF-3:F
Manufacturer Part Number
MT47H64M8CF-3:F
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H64M8CF-3F.pdf
(132 pages)
Specifications of MT47H64M8CF-3:F
Organization
64Mx8
Density
512Mb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
180mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H64M8CF-3:F
Manufacturer:
MICRON
Quantity:
8 000
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Figure 69: READ-to-Power-Down or Self Refresh Entry
Figure 70: READ with Auto Precharge-to-Power-Down or Self Refresh Entry
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
DQS, DQS#
Command
DQS, DQS#
Command
Address
Address
CK#
CKE
A10
DQ
CK
CK#
CKE
A10
DQ
CK
Valid
READ
T0
Valid
READ
T0
Notes:
Notes:
NOP
T1
NOP
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
T1
RL = 3
entry is at T6.
entry is at T6.
RL = 3
NOP
T2
NOP
T2
NOP
T3
NOP
T3
DO
119
DO
DO
Valid
DO
T4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Valid
DO
T4
512Mb: x4, x8, x16 DDR2 SDRAM
DO
DO
Valid
T5
DO
Valid
T5
Transitioning Data
Power-down 2 or
self refresh entry
Transitioning Data
NOP 1
self refresh 2 entry
Power-down or
Power-Down Mode
T6
© 2004 Micron Technology, Inc. All rights reserved.
NOP 1
T6
t CKE (MIN)
t CKE (MIN)
T7
Don’t Care
Don’t Care
T7
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