MT47H128M8HQ-3:G Micron Technology Inc, MT47H128M8HQ-3:G Datasheet - Page 106
MT47H128M8HQ-3:G
Manufacturer Part Number
MT47H128M8HQ-3:G
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H128M8HQ-3G.pdf
(134 pages)
Specifications of MT47H128M8HQ-3:G
Organization
128Mx8
Density
1Gb
Address Bus
17b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
135mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H128M8HQ-3:G
Manufacturer:
MICRON
Quantity:
5 520
Company:
Part Number:
MT47H128M8HQ-3:G TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 57: Write Burst
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Notes:
DQS, DQS#
DQS, DQS#
DQS, DQS#
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. Subsequent rising DQS signals must align to the clock within
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
Address
DI b.
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
WL ± t DQSS
WL - t DQSS
WL + t DQSS
NOP
T1
106
DI
b
NOP
T2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DI
b
DI
b
Transitioning Data
T2n
1Gb: x4, x8, x16 DDR2 SDRAM
t DQSS 5
NOP
T3
5
t DQSS 5
T3n
© 2004 Micron Technology, Inc. All rights reserved.
t
NOP
DQSS.
T4
Don’t Care
WRITE
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